Showing results 1 to 2 of 2
A novel Hafnium Carbide Metal Gate Electrode for NMOS Device Application Cho, Byung Jin; Hwang, WS; Shen, C; Wang, XP; Chan, DSH, 2007 Symposium on VLSI Technology, pp.156 - 157, 2007-06-12 |
Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping Cho, Byung Jin; Shen, C; Pu, J; Li, MF, IEEE 2nd International conference on memory technology and design, pp.99 - 101, 2007-03-07 |
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