DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kwon, Young-Se | - |
dc.contributor.advisor | 권영세 | - |
dc.contributor.author | Hahm, Sung-Ho | - |
dc.contributor.author | 함성호 | - |
dc.date.accessioned | 2011-12-14T02:13:02Z | - |
dc.date.available | 2011-12-14T02:13:02Z | - |
dc.date.issued | 1987 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65789&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/39054 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1987.2, [ iii, 53 p. ] | - |
dc.description.abstract | The development of laser diode and other semiconductor light sources invoked the needs to the detectors of light. In this study, GaAs schottky diodes were fabricated and their photodetector applications were studied. The LPE system was characterized at the $800\,^\circ\!C$ liquidus temperature. By the use of the system, included the undoped layer. The edge growth effect and the meltback effect were analyzed in qualitative. GaAs schottky diodes were fabricated and their electrical and optical characteristics were examined. With buffer case, the forward electrical characteristics were superior to the diode without buffer layer. Typical diodes had the series resistance 10-20($\Omega$), the barrier height 0.76-0.82 eV etc.. By the LED driving circuit, the light detection characteristics were measured and compared to silicon p-i-n diodes. The improvement-of quantum efficiency is essential. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Fabrication of GaAs schottky diode and its photodetector application | - |
dc.title.alternative | GaAs 쇼트키 다이오우드의 제작과 수광특성 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 65789/325007 | - |
dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
dc.identifier.uid | 000851446 | - |
dc.contributor.localauthor | Kwon, Young-Se | - |
dc.contributor.localauthor | 권영세 | - |
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