Fabrication and electrical properties of graphene field-ffect Device그래핀 전계 효과 소자의 제작 및 전기적 특성 분석
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Cho, Byung-Jin | - |
| dc.contributor.advisor | 조병진 | - |
| dc.contributor.author | Ren, Zhe | - |
| dc.contributor.author | 임철 | - |
| dc.date.accessioned | 2011-12-14T02:08:54Z | - |
| dc.date.available | 2011-12-14T02:08:54Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=327327&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/38777 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2009. 8., [ v, 49 p. ] | - |
| dc.description.abstract | Graphene is a single layer of sp2-bonded carbon atoms arranged in a honeycomb lattice, which shows unique electronic properties. Graphene channel field-effect devices are fabricated by using silicon dioxide/silicon wafers as a global back gate. An optimized silicon dioxide thickness is found and an aluminum oxide interlayer is applied to improve graphene-substrate adhesion. Effect of vacuum annealing on device performance has been investigated. | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | Graphene | - |
| dc.subject | Field-effect device | - |
| dc.subject | Carrier mobility | - |
| dc.subject | 그래핀 | - |
| dc.subject | 전계효과소자 | - |
| dc.subject | 전하 이동도 | - |
| dc.subject | Graphene | - |
| dc.subject | Field-effect device | - |
| dc.subject | Carrier mobility | - |
| dc.subject | 그래핀 | - |
| dc.subject | 전계효과소자 | - |
| dc.subject | 전하 이동도 | - |
| dc.title | Fabrication and electrical properties of graphene field-ffect Device | - |
| dc.title.alternative | 그래핀 전계 효과 소자의 제작 및 전기적 특성 분석 | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 327327/325007 | - |
| dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
| dc.identifier.uid | 020074088 | - |
| dc.contributor.localauthor | Cho, Byung-Jin | - |
| dc.contributor.localauthor | 조병진 | - |
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