(A) study of complementary thin-film transistor inverters using n-ZnO and p-pentacene channels = n-ZnO와 p-pentacene 채널을 이용한 보상 박막트랜지스터 인버터 구현에 관한 연구

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Currently people have interested in flexible and low-cost technologies as future electronics. Low-cost and flexible electronics require label-like form factors based on low-temperature process and ultralow-cost fabrication process, which can lead new electronics such as RFID (Radio Frequency IDentification) tags and smart card, etc. TFTs (Thin-film transistors) can be constructed on the arbitrary substrates. Therefore TFT technologies and its complementary TFT circuits as suitable label-like form factors have been considered as promising building blocks for such low-cost and flexible electronics. Of logic circuits inverters are primarily described since an inverter is the simplest electronic circuit and can be possible to create more complex logic. Oxide semiconductors are typically n-type due to native defects but p-type oxide semiconductors exhibit inferior properties. But oxide semiconductors have great advantages such as high mobility even in amorphous phase and air stability. While commonly well-known organic semiconductors are p-type. But n-type organic semiconductors exhibit inferior properties. In addition to that, organic semiconductors are intolerant to the solvents which cannot be applicable to conventional photolithography process. For hybrid channel complementary inverters, bottom contact p-pentacene and top-contact n-ZnO(zinc oxide) TFT structures are adopted to avoid solvents from pentacene and can benefit from their comparative advantages. The electrical properties of ZnO film and ZnO TFT as a top contact structure and pentacene film and pentacene TFT as a bottom contact structure are described. Both channel layers are stable in air and can be formed by low temperature deposition process. Therefore the hybrid circuits can be applicable to flexible electronic devices. The n-ZnO channel TFTs have saturation mobility of $~7.12 cm^2 /Vs$ at $V_{DS}$ of 35V, on/off of $~10^7$. However, inverted coplanar bottom contact pentacene TFTs suffer ...
Advisors
Yoo, Seung-Hyupresearcher유승협researcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2009
Identifier
308851/325007  / 020073492
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2009.2, [ xi, 92 p. ]

Keywords

ZnO; pentacene; complementary inverter; bottom contact TFT; ZnO; 펜타센; 보상 인버터회로; 하부전극 박막트랜지스터; ZnO; pentacene; complementary inverter; bottom contact TFT; ZnO; 펜타센; 보상 인버터회로; 하부전극 박막트랜지스터

URI
http://hdl.handle.net/10203/38731
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=308851&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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