Flexible memory based on resistance switching

Abstract

A flexible type of resistance random access memory (RRAM) is presented that shows good flexibility, endurance, and memory performance. The flexible substrate is PES (polyethersulfone) and aluminum is used for the top and bottom electrodes. Two materials, $HfO_2$ and $TiO_2$, are used as the insulator layer. All process flows are compatible with conventional silicon technology. The simple structure, metal-insulator-metal (MIM), of the flexible RRAM leads to excellent flexibility and lower processing costs compared to other current flexible memories. In addition, flexible RRAM shows no degradation under severe conditions that are otherwise detrimental to electronic devices, such as exposure to $\gamma -ray$ irradiation, dipping at harsh aqueous solutions, neuron cell culturing process, and repeated folding stress. These results imply that the application of flexible RRAM is not limited to flexible versions of typical electronic devices but can also be introduced to aerospace, bio-medical, low-cost consumable, and wearable memory devices.