Fabrication of submicron T-gate GaAs FET and preamplifierSubmicron T-gate GaAs FET 및 preamplifier 제작
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Kwon, Young-Se | - |
| dc.contributor.advisor | 권영세 | - |
| dc.contributor.author | Hwang, Jong-Seung | - |
| dc.contributor.author | 황종승 | - |
| dc.date.accessioned | 2011-12-14T02:01:43Z | - |
| dc.date.available | 2011-12-14T02:01:43Z | - |
| dc.date.issued | 1995 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=99305&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/38315 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1995.2, [ ii, 52 p. ] | - |
| dc.description.abstract | Submicron T-Gate GaAs FET is fabricated. It uses 1㎛ FET photolithography process. So, its process has high productivity and low cost. Fabricated FET has $L_g$ of 0.4㎛, $g_m$ of 173 mS/mm, $f_T$ of 32 GHz and $f_T$ of 64 GHz. Using T-Gate FET, preamplifier for optical communication is designed and fabricated. Fabricated amplifier has bandwidth of 1.7 GHz, transimpedance of 66.5 dBΩ, and $S_22$ under -15 dB. The laser lithography system for mask fabrication is developed. The minimum line width for fine pattern is 2.5 ㎛. | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | Fabrication of submicron T-gate GaAs FET and preamplifier | - |
| dc.title.alternative | Submicron T-gate GaAs FET 및 preamplifier 제작 | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 99305/325007 | - |
| dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
| dc.identifier.uid | 000933564 | - |
| dc.contributor.localauthor | Kwon, Young-Se | - |
| dc.contributor.localauthor | 권영세 | - |
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