갈륨비소 FECFET의 게이트 기생 커패시턴스 감소에 관한 연구A study on the reduction of gate parasitic capacitance of GaAs FECFET

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dc.contributor.advisor권영세-
dc.contributor.advisorKwon, Young-Se-
dc.contributor.author남충모-
dc.contributor.authorNam, Choong-Mo-
dc.date.accessioned2011-12-14T01:59:32Z-
dc.date.available2011-12-14T01:59:32Z-
dc.date.issued1994-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=69390&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/38170-
dc.description학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1994.2, [ 56 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title갈륨비소 FECFET의 게이트 기생 커패시턴스 감소에 관한 연구-
dc.title.alternativeA study on the reduction of gate parasitic capacitance of GaAs FECFET-
dc.typeThesis(Master)-
dc.identifier.CNRN69390/325007-
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid000923162-
dc.contributor.localauthor권영세-
dc.contributor.localauthorKwon, Young-Se-
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EE-Theses_Master(석사논문)
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