이온 주입된 산소가 실리콘 박막의 결정화와 Polysilicon TFT에 미치는 영향Effects of implanted oxygen on the crystallization of silicon films and polysilicon TFT characteristics

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dc.contributor.advisor김충기-
dc.contributor.advisorKim, Choong-Ki-
dc.contributor.author이성훈-
dc.contributor.authorLee, Seong-Hoon-
dc.date.accessioned2011-12-14T01:58:43Z-
dc.date.available2011-12-14T01:58:43Z-
dc.date.issued1993-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68699&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/38115-
dc.description학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1993.2, [ 50, [2] p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title이온 주입된 산소가 실리콘 박막의 결정화와 Polysilicon TFT에 미치는 영향-
dc.title.alternativeEffects of implanted oxygen on the crystallization of silicon films and polysilicon TFT characteristics-
dc.typeThesis(Master)-
dc.identifier.CNRN68699/325007-
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid000911441-
dc.contributor.localauthor김충기-
dc.contributor.localauthorKim, Choong-Ki-
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EE-Theses_Master(석사논문)
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