Fabrication of inner-striped ridge overgrown GaAs/AlGaAs double-heterostructure LASER diode

Abstract

The main objective of this work is to develop a low threshold current LASER Diode by employing an inner-striped current blocking layer. An emphasis is also on the SLPE(Selective Liquid Phase Epitaxy) of the Ridge. Adopting a special current blocking structure, called AlGaAs base nPn transistor current block, we obtained a good means of current restriction. Although the threshol current of the Laser diode was ratehr high, 220mA for 180$\mu{m}$ cavity length, we showed a possibility of lowering the threshold current as was demonstrated in the near field pattern characteristics.