DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Yang, Kyoung-Hoon | - |
dc.contributor.advisor | 양경훈 | - |
dc.contributor.author | Kim, Tae-Ho | - |
dc.contributor.author | 김태호 | - |
dc.date.accessioned | 2011-12-14T01:49:25Z | - |
dc.date.available | 2011-12-14T01:49:25Z | - |
dc.date.issued | 2002 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174049&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/37519 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ x, 100 p. ] | - |
dc.description.abstract | In this thesis, modeling of InP/InGaAs single heterojunction bipolar transistors (SHBTs) has been presented. Also, the thermal characteristics of InP/InGaAs SHBTs have been discussed. The small-signal model parameters of InP/InGaAs SHBTs were extracted and optimized at various bias operating conditions such as the cut-off, open-collector and active mode. To verify the small-signal model, the multi-bias S-parameter measurements under active mode bias conditions were performed, and the good agreement between the measured and modeled data was obtained at various bias conditions. The thermal characteristics of InP/InGaAs SHBTs have been analyzed and discussed on the theoretical and experimental results. In order to investigate the contribution of impact ionization and built-in potential reduction effects to thermal behavior of the devices, the thermal related parameters, such as temperature dependence of impact ionization multiplication factor, thermal-electric feedback coefficient and thermal resistance, were extracted. Using these extracted parameters, the built-in potential reduction and impact ionization effects in the common-emitter I-V characteristics of InP/InGaAs SHBTs have been analyzed. Based on the results obtained in thermal characteristics of InP SHBTs, a new large-signal model of InP/InGaAs SHBTs has been developed which includes self-heating and impact ionization effects. The self-heating and impact ionization effects observed from the InP-based SHBTs have been modeled through a macro modeling approach. The dependence of impact ionization on VCB and junction temperature has been modeled using a feedback current source and a temperature dependent voltage source. The model implemented in HP-ADS has been verified by comparing the measured and simulated data. Good agreement between the measured and simulated data has been achieved in the overall device performance of dc, multi-bias small-signal S-parameter and large-signal microwave p... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Impact ionization | - |
dc.subject | InP | - |
dc.subject | heterojunction bipolar transistor | - |
dc.subject | large-signal model | - |
dc.subject | Thermal Effect | - |
dc.subject | Thermal Effect | - |
dc.subject | Impact Ionization | - |
dc.subject | InP | - |
dc.subject | 이종접합트랜지스터 | - |
dc.subject | 대신호 모델 | - |
dc.title | Large-signal modeling of InP/InGaAs single heterojunction bipolar transistors including thermal and impact ionization effects | - |
dc.title.alternative | 열효과와 Impact ionization 효과를 포함한 InP/InGaAs 단일 이종접합 바이폴라 트랜지스터 대신호 모델링 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 174049/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
dc.identifier.uid | 020003145 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.contributor.localauthor | 양경훈 | - |
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