실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 임굉수 | - |
| dc.contributor.advisor | Lim, Koeng-Su | - |
| dc.contributor.author | 이병석 | - |
| dc.contributor.author | Lee, Byung-Suk | - |
| dc.date.accessioned | 2011-12-14T01:48:57Z | - |
| dc.date.available | 2011-12-14T01:48:57Z | - |
| dc.date.issued | 2001 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=169446&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/37490 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.8, [ 56 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 메모리 | - |
| dc.subject | 나노결정 | - |
| dc.subject | 시뮬레이션 | - |
| dc.subject | simulation | - |
| dc.subject | memory | - |
| dc.subject | nanocrystal | - |
| dc.title | 실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석 | - |
| dc.title.alternative | Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 169446/325007 | - |
| dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
| dc.identifier.uid | 020003376 | - |
| dc.contributor.localauthor | 임굉수 | - |
| dc.contributor.localauthor | Lim, Koeng-Su | - |
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.