(A) study on physical behaviors of the substrate resistance for CMOS RF modelingCMOS RF 모델링을 위한 기판저항의 물리적 특성에 관한 연구

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dc.contributor.advisorShin, Hyung-Cheol-
dc.contributor.advisor신형철-
dc.contributor.authorKwon, Myeong-Ju-
dc.contributor.author권명주-
dc.date.accessioned2011-12-14T01:47:51Z-
dc.date.available2011-12-14T01:47:51Z-
dc.date.issued2001-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=165556&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/37420-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.2, [ ii, 40 p. ]-
dc.description.abstractA simple parameter extraction method of substrate resistance is proposed. And physical behaviors of the substrate resistance for CMOS RF modeling such as the drain bias dependency, the effect of the body contact width ans STI (Shallow Trench Isolation) distance are observed. The analyses of simulation results and measurement data are described. And validation is carried out then drawn conclusions.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectsubstrate-
dc.subjectmodeling-
dc.subjectMOSFET-
dc.subjectRF-
dc.subjectresistance-
dc.subject물리적 특성-
dc.subject파라미터-
dc.subject저항-
dc.subject기판-
dc.subject모델링-
dc.title(A) study on physical behaviors of the substrate resistance for CMOS RF modeling-
dc.title.alternativeCMOS RF 모델링을 위한 기판저항의 물리적 특성에 관한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN165556/325007-
dc.description.department한국과학기술원 : 전기및전자공학전공, -
dc.identifier.uid000993031-
dc.contributor.localauthorShin, Hyung-Cheol-
dc.contributor.localauthor신형철-
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EE-Theses_Master(석사논문)
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