저온 공정을 사용한 ECR $N_2O$-플라즈마 산화막을 가지는 다결정 실리콘 박막 트랜지스터 EEPROM 소자A polysilicon thin film transistor EEPROM cell with ECR $N_2O-plasma$ oxide using low temperature process
- Advisors
- 한철희researcher; Han, Chul-Hiresearcher
- Description
- 한국과학기술원 : 전기및전자공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1999
- Identifier
- 150880/325007 / 000973408
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ ii, 31 p. ]
- Keywords
저온공정; EEPROM; 박막트랜지스터; 다결정실리콘; 플라즈마산화막; Plasma oxide; Low temperature process; EEPROM; TFT; Polysilicon
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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