DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Hyung-Cheol | - |
dc.contributor.advisor | 신형철 | - |
dc.contributor.author | Yang, Sun-A | - |
dc.contributor.author | 양선아 | - |
dc.date.accessioned | 2011-12-14T01:44:11Z | - |
dc.date.available | 2011-12-14T01:44:11Z | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=150877&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/37188 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ iii, 50 p. ] | - |
dc.description.abstract | Field emission vacuum microelectronic devices, which operate at a low voltage, require sharp cathode tips and minimal cathode to anode spacing. Using high resolution electron beam lithography in combination with reactive ion etching technique, lateral multi-tip diodes have been fabricated with cathode to anode spacings less than 40nm. The devices were measured in ultra high vacuum chamber which was pumped down to $3×10^{-9}$ Torr. The electrical characteristics show low voltage operation and the linearity of the Fowler-Nordheim plots provides another confirmation of field emission. Triodes have been fabricated by adding a gate electrode between cathode and anode electrodes. After the emission currents of the fabricated devices versus time under $V_A=30V$ for 2hours, the maximum current fluctuation was 0.2%. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Lateral silicon field emission devices using electron beam lithography | - |
dc.title.alternative | 전자선 묘화를 이용한 측면형 실리콘 전계 방출 소자에 관한 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 150877/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
dc.identifier.uid | 000973387 | - |
dc.contributor.localauthor | Shin, Hyung-Cheol | - |
dc.contributor.localauthor | 신형철 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.