(An) efficient crosstalk parameter extraction of high-speed on-chip interconnection lines

Abstract

In this paper, We firstly introduce a simplified and reliable approach for the extraction of the crosstalk model parameters of high-speed on-chip interconnection lines. The voltage coupling coefficient, the mutual capacitance and the mutual inductance can be easily extracted from the S-parameter measurement and reflection coefficient. In contrast to the previous extraction procedures of the crosstalk models, the suggested extraction procedure requires less on-wafer probing steps. Also the models can be easily applicable to the SPICE simulation. Especially the procedure is useful for the homogeneous guiding structures such as EM (Embedded Microstrip) and IEM (Inverted Embedding Microstrip) structures that are needed microstrip structures for the future high-speed on-chip interconnection lines. The validity of the extracted model was examined by comparing the SPICE simulation based on the extracted model parameters and the time-domain crosstalk pulse measurement using the TDR/T. The close agreement of the amplitude and the pulse shape was observed, indicating the preciseness of the extracted crosstalk model.