다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가Fablication and characterization of a novel vertical submicron polycrystalline silicon FET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이희철 | - |
| dc.contributor.advisor | 한철희 | - |
| dc.contributor.advisor | Lee, Hee-Chul | - |
| dc.contributor.advisor | Han, Chul-Hi | - |
| dc.contributor.author | 이가원 | - |
| dc.contributor.author | Lee, Ga-Won | - |
| dc.date.accessioned | 2011-12-14T01:38:32Z | - |
| dc.date.available | 2011-12-14T01:38:32Z | - |
| dc.date.issued | 1996 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105987&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/36828 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1996.2, [ iii, 78 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | Submicron | - |
| dc.subject | 다결정실리콘 | - |
| dc.subject | Vertical transistor | - |
| dc.subject | Submicron | - |
| dc.subject | 수직구조트랜지스터 | - |
| dc.subject | Polycrystalline silicon | - |
| dc.title | 다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가 | - |
| dc.title.alternative | Fablication and characterization of a novel vertical submicron polycrystalline silicon FET | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 105987/325007 | - |
| dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
| dc.identifier.uid | 000943370 | - |
| dc.contributor.localauthor | 이희철 | - |
| dc.contributor.localauthor | 한철희 | - |
| dc.contributor.localauthor | Lee, Hee-Chul | - |
| dc.contributor.localauthor | Han, Chul-Hi | - |
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- EE-Theses_Master(석사논문)
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