DSpace at KOASAS: 다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Theses_Master(석사논문)

다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가Fablication and characterization of a novel vertical submicron polycrystalline silicon FET

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이가원 / Lee, Ga-Won

Advisors: 이희철 researcher; 한철희 researcher; Lee, Hee-Chul researcher; Han, Chul-Hi researcher

Description: 한국과학기술원 : 전기 및 전자공학과,

Publisher: 한국과학기술원

Issue Date: 1996

Identifier: 105987/325007 / 000943370

Language: kor

Description: 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1996.2, [ iii, 78 p. ]

Keywords: Submicron; 다결정실리콘; Vertical transistor; Submicron; 수직구조트랜지스터; Polycrystalline silicon

URI: http://hdl.handle.net/10203/36828

Link: http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105987&flag=dissertation

Appears in Collection: EE-Theses_Master(석사논문)

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다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가Fablication and characterization of a novel vertical submicron polycrystalline silicon FET

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