다결정 실리콘을 사용한 새로운 수직구조 트랜지스터의 제작 및 특성 평가 = Fablication and characterization of a novel vertical submicron polycrystalline silicon FET

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Advisors
이희철researcher한철희researcherLee, Hee-ChulresearcherHan, Chul-Hiresearcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1996
Identifier
105987/325007 / 000943370
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1996.2, [ iii, 78 p. ]

Keywords

Submicron; 다결정실리콘; Vertical transistor; Submicron; 수직구조트랜지스터; Polycrystalline silicon

URI
http://hdl.handle.net/10203/36828
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105987&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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