#### Fabrication of HgCdTe photovoltaic infrared detector and enhancement of its performance by ECR plasma hydrogenation = HgCdTe photovoltaic 적외선 감지소자 제작 및 수소화처리를 통한 특성 향상

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HgCdTe is the most generally used material for detecting infrared because of its capability of tailoring bandgap energy for the detecting wavelength by controlling the composition, a large electron mobility, and high normalized detectivity. This thesis describes the process of developing HgCdTe photovoltaic photodiode from 1990 to 1995. The characteristics of devices fabricated in early days showed increasing reverse bias leakage current with decreasing temperature and saturated RoA value at low temperature. As a method to find the sources of leakage current, current modeling was performed which includes diffusion current, generation current, direct tunneling current, and trap assisted tunneling current. The leakage current modeling can be well coincident with the leakage current of fabricated photodiodes. It is noteworthy in the leakage current modeling that the trap assisted tunneling current is dominant leakage current term in the substrate of which concentration is higher than $1 \times 10^{16} / cm^3$. From this result, devices with good characteristics could be fabricated by using the wafers with low carrier concentration and by decreasing the process temperature. To eliminate the problem of increased carrier concentration by vaporizing Hg from the wafer, decreasing process temperature is needed. In order to develop device with good characteristics, various test processes have been done. One of method to see the effects of those test processes on the HgCdTe device is measuring the minority carrier diffusion length. A new method for measuring the steady - state effective minority carrier diffusion length is proposed in this thesis. The diffusion length is extracted by means of measuring photocurrents which reduce exponentially with the distance between the junction edge and the region into which the environmental infrared penetrates. The region exposed to infrared radiation can be defined by the shape of the optical shadow mask (OSM). When the thickness of...
Lee, Hee-Chulresearcher이희철researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1996
Identifier
106535/325007 / 000925352
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기 및 전자공학과, 1996.2, [ vii, 103 p. ]

Keywords

Diffusion length; Photodiode; Infrared; HgCdTe; Hydrogenation; 수소화; 확산거리; 광다이오드; 적외선; 메큐리카듐텔루로이더

URI
http://hdl.handle.net/10203/36338