HgCdTe surface passivation using electrochemical CdTe deposition전기화학적 CdTe 증착을 이용한 HgCdTe 표면 보호

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In this thesis, electrochemical CdTe deposition process for HgCdTe surface passivation have been proposed and studied. The deposition range of CdTe was predicted through theoretical calculation of Gibbs’ free energy change and achieved by cyclic voltammetry experiments with various bath compositions. After that, constant step potentials are applied to HgCdTe substrates to electrochemically deposit CdTe from ethylene glycol based electrolyte. To improve the surface morphology and crystallinity of electrodeposited CdTe thin films by suppressing the unwanted reduction process from dissolved oxygen in electrolyte, nitrogen bubbling process was introduced before electrodeposition of CdTe. Thus, stoichiometric and highly oriented CdTe film was formed at deposition potential range between -0.4 and -0.55 V/SCE. After CdTe electrodeposition, MIS capacitors (Ni / ZnS / electrodeposited CdTe / MCT) were formed and its capacitance-gate voltage characteristics were measured at the temperature and frequency of 80 K and 1 MHz. Best C-V result was obtained when CdTe films were electrodeposited at -0.5 V/SCE. However, C-V curve showed that there was high density of fixed insulator charge density and high interface trapped charge density. The constant current deposition method was introduced to reduce high interface trapped charge density by control deposition current density. However, C-V curve was hardly modulated with applied gate voltage because of initial deposition potential of -0.2 V/SCE more positive than deposition potential of -0.5 V/SCE, where Te rich CdTe would be electrodeposited. Thus, the constant potential deposition technique was introduced and good CdTe films, which were well modulated with gate voltage and showed fixed charge density of 6.34×10^{10} /㎠, could be electrodeposited. Effect of Te ion concentration in electrolyte was also examined. As Te ion concentration in electrolyte grew thinner from 10 mM Te to no Te ion, deposition current density became...
Advisors
Lee, Hee-Chulresearcher이희철researcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2002
Identifier
177325/325007 / 000975402
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2002.8, [ xv, 167 p. ]

Keywords

CdTe; surface passivation; Infrared detector; HgCdTe; electrodeposition; 전착; 카드뮴텔루라이드; 표면 보호; 적외선 감지소자; 머큐리카드뮴텔루라이드

URI
http://hdl.handle.net/10203/36030
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=177325&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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