New junction termination technique and corrugated base structure for high voltage and high speed switching power devices = 고 내압 고속 스윗칭 전력용 반도체 소자를 위한 새로운 접합종단부 기술과 코러게이티드 베이스 구조

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High speed and high voltage characteristics are major concerns of power devices using in power converting systems. A new junction termination technique using inductively coupled plasma reactive ion etcher is proposed in this thesis. Principles of the breakdown voltage, the effects of the cylindrical junction and the spherical junction, and various junction termination techniques are described in chapter 2. The proposed junction termination structure achieved above 90% of the ideal breakdown voltage in simulation and experiments by eliminating the cylindrical and spherical junction curvature formed inherently in planar process. Comparison the proposed technique with the conventional technologies such as multiple field limiting rings and SIPOS resistive field plates for the typical width and the relative area required for the voltage ratings of 700V and 2,000V shows the performances of the proposed technique are superior to other techniques. The proposed structure consumes just 4 % of the junction termination area that is required for multiple field limiting rings for the same voltage rating devices. We found that the breakdown voltages of the proposed structure were dependent on the trench width, and it was saturated with sufficient trench width. Since aspect ratio 10:1 is appropriate for fabrication in practical case, the expected trench width is about 1110 of the corresponding trench depth. A new bipolar power transistor with corrugated base junctions for high speed switching is also proposed in this thesis. Switching mechanism of the bipolar transistors and conventional high speed switching technologies are described in chapter 4. While the conventional bipolar transistors have parallel plane base junctions, the proposed bipolar transistor has many corrugated base junctions below the base electrodes and the base electrodes contact to high doped base region and low doped base region at the same time. Since the conventional base region has a uniform doping late...
Lee, Kwy-Roresearcher이귀로researcher
한국과학기술원 : 전기및전자공학전공,
Issue Date
174599/325007 / 000995163

학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ xv, 123 p. ]


High Speed; High Voltage; Junction Termination; Corrugated Base Junction; Power Devices; 반도체; 전력용; 스윗칭; 고속; 고내압

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