DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Choong-Ki | - |
dc.contributor.advisor | 김충기 | - |
dc.contributor.author | Kim, Kyeong-Tae | - |
dc.contributor.author | 김경태 | - |
dc.date.accessioned | 2011-12-14 | - |
dc.date.available | 2011-12-14 | - |
dc.date.issued | 1988 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=61199&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/35780 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기 및 전자공학과, 1988.8, [ vii, 122 p. ] | - |
dc.description.abstract | Shallow $p^+$-n junctions on the order of $0.1 \mu m$ deep have been fabricated using boron-nitride solid diffusion sources. The process combines the hydrogen injection method and rapid thermal processing. Sheet resistances, in ranges from 50 to $130 \Omega$/sq with junction depths from 0.1 to $0.19 \mu m$, are possible with this technique. $p^+$-n diode characteristics of $0.11 \mu m$ junctions show low reverse leakage current of the order of $10 nA/cm^2$ and the ideality factor of 1.02 for forward bias, indicating the possibility of this method to form PMOS source/drain contacts. Shallow phosphorus $n^+$-p junctions have also been fabricated by rapid thermal processing using the planar diffusion source PH 1000N. Phosphors junctions with sheet resistances in ranges from 34 to $102 \Omega$/sq can be achieved with junction depths from 0.12 to $0.22 \mu m$. The phosphorus $n^+$-p junction diode fabricated with this technique have shown somewhat inferior characteristics in comparison with implanted arsenic junction diodes, showing the reverse leakage current of about $100 nA/cm^2$. However, the process is considered applicable to the NMOS source/drain contacts. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Rapid thermal diffusion of boron and phosphorus into silicon using solid diffusion sources | - |
dc.title.alternative | 고체 확산 Source 를 사용한 붕소와 인의 실리콘으로의 고속 열확산 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 61199/325007 | - |
dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
dc.identifier.uid | 000825027 | - |
dc.contributor.localauthor | Kim, Choong-Ki | - |
dc.contributor.localauthor | 김충기 | - |
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