Design of X-band high power amplifier with magnetically coupled transmission line transformer자기적으로 결합된 전송선 변압기를 이용한 X 대역 고출력 증폭기의 설계

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dc.contributor.advisorHong, Song-Cheol-
dc.contributor.advisor홍성철-
dc.contributor.authorLee, Kyung-Ai-
dc.contributor.author이경애-
dc.date.accessioned2011-12-14-
dc.date.available2011-12-14-
dc.date.issued2009-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=327786&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/35549-
dc.description학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2009. 8., [ vi, 118 p. ]-
dc.description.abstractThere is an increasing demand for X band radar T/R modules in relation to military and public service use. One of the most important components of the module is a high power amplifier, which should preferably be developed as an MMIC for minimization and reproducibility of the module. For X band compact high power amplifier, the two power combiners are proposed. The high power amplifier with bus-bar combiner is fabricated with HEMT technology. Bus-bar combiner is impedance transforming combiner with simple biasing networks. Improved bus-bar combiner for high output power is proposed. The high power amplifier with tournament-shaped power combiner is proposed and fabricated with HEMT technology. Because the differential structure with tournament-shaped power combiner removes the transmission line for biasing, the size of the power amplifier is decreased. Besides, transmission line transformers of tournament-shaped power combiner are implemented with shorter transmission lines than the transmission lines of bus-bar combiner for impedance transform. Therefore, the tournament-shaped power combiner makes the power amplifier more compact. The amplifier with tournament-shaped combiner has higher power density than that with bus-bar combiner at same output power because of small chip-size. Lastly, the efficiency and linearity characteristics of the parallel matching power combiner and tournament power combiner are discussed in detail. The more combined transistors with tournament power combiner show the better efficient characteristics than the transistors with parallel matching power combiner. Moreover the bias network of the tournament power combiner has more linear characteristics than the bias network of parallel matching combiner. These are proven through the simulation and measurement results. When high power amplifier module for base station is designed, the tournament power combiner can use less surface-mounted device (SMD) capacitors for matching than pa...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjecthigh power amplifier-
dc.subjecttransmission line transformer-
dc.subjectparallel matching combiner-
dc.subjecttournament-shaped combiner-
dc.subject고출력 증폭기-
dc.subject전송선 변압기-
dc.subject이원 결합기-
dc.subject토너먼트 전원결합기-
dc.subjecthigh power amplifier-
dc.subjecttransmission line transformer-
dc.subjectparallel matching combiner-
dc.subjecttournament-shaped combiner-
dc.subject고출력 증폭기-
dc.subject전송선 변압기-
dc.subject이원 결합기-
dc.subject토너먼트 전원결합기-
dc.titleDesign of X-band high power amplifier with magnetically coupled transmission line transformer-
dc.title.alternative자기적으로 결합된 전송선 변압기를 이용한 X 대역 고출력 증폭기의 설계-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN327786/325007 -
dc.description.department한국과학기술원 : 전기및전자공학전공, -
dc.identifier.uid020045170-
dc.contributor.localauthorHong, Song-Cheol-
dc.contributor.localauthor홍성철-
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EE-Theses_Ph.D.(박사논문)
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