Characterization of protocrystalline silicon multilayer and its application to light-absorbing layers for solar cells프로터결정 실리콘 다층막의 특성 분석 및 태양전지 빛 흡수층으로의 응용

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dc.contributor.advisorLim, Koeng-Su-
dc.contributor.advisor임굉수-
dc.contributor.authorKwon, Seong-Won-
dc.contributor.author권성원-
dc.date.accessioned2011-12-14-
dc.date.available2011-12-14-
dc.date.issued2006-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=258137&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/35358-
dc.description학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2006.8, [ iv, 102 p. ]-
dc.description.abstractThe protocrystalline silicon (pc-Si:H) multilayer solar cell is very promising owing to its fast stabilization with low degradation against light irradiation. However, the pc-Si:H multilayer have not extensively been investigated in detail on its material characteristics yet. We present the material characteristics of pc-Si:H multilayer using a transmission electron microscopy (TEM), Raman spectroscopy, Fourier transform infra (FTIR) spectroscopy, phase-modulated spectroscopic ellipsometry (SE) and quantum efficiency (QE) measurement. A cross-sectional TEM (XTEM) micrograph shows that a pc-Si:H multilayer has a repeatedly layered structure consisting of low hydrogen-diluted $(S_L)$ and highly hydrogen-diluted $(S_H)$ sublayers. The crystalline-like objects (CLOs) embedded in a-Si:H matrix is also shown in a planar TEM image. The analysis of the Raman spectra presents that the medium-range-order (MRO) and short-range-order (SRO) of a pc-Si:H multilayer are improved. Thus, a pc-Si:H multilayer is more specific material than amorphous silicon (a-Si:H) because of its phase and structure. The peculiar material characteristics of a pc-Si:H multilayer is (1) a repeatedly layered structure, (2) an intermediated phase material, (3) the distribution of the CLO embedded in a-Si:H matrix of SH sublayer and (4) the improvement of MRO and SRO. We can also pay attention to the indirect evidence of CLO from the stretching mode at 2100 cm-1 of FTIR spectra, which is ascribed to clustered Si-H bonds at the boundary region between CLO and a-Si:H matrix. Therefore, we suggest a microstructural factor $(R^*)$ as the figure of merit (FoM) for evaluating of the pc-Si:H multilayer. To verify the suggested FoM, we performed the QE measurement of pc-Si:H multilayers with different SH sublayer deposition time $(t_{SH})$ during light illumination. We have observed the strong correlation between the light-induced degradation and the FoM. We prepared pc-Si:H multilayer solar cells in o...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectProtocrystalline Silicon-
dc.subjectAmorphous Silicon-
dc.subjectSolar Cells-
dc.subjectPhotovoltaics-
dc.subjectProtocrystalline Silicon Multilayer-
dc.subject프로터결정 실리콘 다층막-
dc.subject프로터결정 실리콘-
dc.subject비정질 실리콘-
dc.subject태양전지-
dc.subject태양광-
dc.titleCharacterization of protocrystalline silicon multilayer and its application to light-absorbing layers for solar cells-
dc.title.alternative프로터결정 실리콘 다층막의 특성 분석 및 태양전지 빛 흡수층으로의 응용-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN258137/325007 -
dc.description.department한국과학기술원 : 전기및전자공학전공, -
dc.identifier.uid020015023-
dc.contributor.localauthorLim, Koeng-Su-
dc.contributor.localauthor임굉수-
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