Record Memory Window (12.2 V) and Superior QLC Retention (10 year, 85°C) by Gate Stack Engineering in Ferroelectric FET: from “MIFIS” to “MIKFIS”
- Issue Date
- 2024-12-09
- Language
- English
- Citation
2024 International Electron Devices Meeting (IEDM)
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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