LEED and XRD study of ultrathin MgF2 film on Si(111) surface실리콘 (111) 표면 위의 플루오르화마그네슘 박막의 저에너지 전자 회절과 X선 회절에 관한 연구

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dc.contributor.advisorKim, Se-Hun-
dc.contributor.advisor김세훈-
dc.contributor.authorChung, Young-Su-
dc.contributor.author정영수-
dc.date.accessioned2011-12-13T05:01:01Z-
dc.date.available2011-12-13T05:01:01Z-
dc.date.issued1996-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105601&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/32743-
dc.description학위논문(석사) - 한국과학기술원 : 화학과, 1996.2, [ ii, 51 p. ]-
dc.description.abstractThe growth of thin $MgF_2$ films on Si(111) was studied with in situ LEED and ex situ XRD. When $MgF_2$ was deposited onto the Si(111)-surface and annealed from room temperature, a series of LEED patterns (1×1→3×1→Si(111)-7×7) was observed. The 3×1 phase was formed upon annealing the film at 700~800℃ and was stable over a wide temperature range. At such high temperature, $MgF_2$ is likely to dissociate, with evaporation of fluorines and formation of a 3×1 structure. If the annealing temprature was slowly raised, complex LEED patterns were observed between 1×1 and 3×1 phase. These patterns are attributed to the partially disordered surface layer in the course of forming the 3×1 structure. One of them is a third-order splitting pattern. To identify this structure, we calculated diffraction patterns within kinematic approximation for a number of antiphase models and could obtain a similar pattern. The corresponding structure has a dominant 3×1 surface structure but a true surface exists with a large unit cell because of the regular antiphase arrangement. From XRD studies we found out that the deposited $MgF_2$ film was oriented in (110) direction.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectMgF2-
dc.subjectXRD-
dc.subjectLEED-
dc.subjectSi(111)-
dc.subject실리콘 (111) 표면-
dc.subjectX선회절-
dc.subject저에너지 전자 회절-
dc.subject플루오르화마그네슘 박막-
dc.titleLEED and XRD study of ultrathin MgF2 film on Si(111) surface-
dc.title.alternative실리콘 (111) 표면 위의 플루오르화마그네슘 박막의 저에너지 전자 회절과 X선 회절에 관한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN105601/325007-
dc.description.department한국과학기술원 : 화학과, -
dc.identifier.uid000943505-
dc.contributor.localauthorKim, Se-Hun-
dc.contributor.localauthor김세훈-
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CH-Theses_Master(석사논문)
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