DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Lee, Geon Bum | ko |
dc.contributor.author | Yoo, Jaewook | ko |
dc.contributor.author | Lee, Khwang-Sun | ko |
dc.contributor.author | Ku, Ja-Yun | ko |
dc.contributor.author | Kim, Kihyun | ko |
dc.contributor.author | Kim, Jungsik | ko |
dc.contributor.author | Ye, Peide D. | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2024-09-26T10:00:17Z | - |
dc.date.available | 2024-09-26T10:00:17Z | - |
dc.date.created | 2024-09-26 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.215 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/323219 | - |
dc.description.abstract | The reliability of a /?-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of /?-Ga2O3 and Al2O3 was mapped | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET | - |
dc.type | Article | - |
dc.identifier.wosid | 001200175100001 | - |
dc.identifier.scopusid | 2-s2.0-85186250156 | - |
dc.type.rims | ART | - |
dc.citation.volume | 215 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2024.108882 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Bae, Hagyoul | - |
dc.contributor.nonIdAuthor | Lee, Geon Bum | - |
dc.contributor.nonIdAuthor | Yoo, Jaewook | - |
dc.contributor.nonIdAuthor | Lee, Khwang-Sun | - |
dc.contributor.nonIdAuthor | Ku, Ja-Yun | - |
dc.contributor.nonIdAuthor | Kim, Kihyun | - |
dc.contributor.nonIdAuthor | Kim, Jungsik | - |
dc.contributor.nonIdAuthor | Ye, Peide D. | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Wide bandgap | - |
dc.subject.keywordAuthor | Power device | - |
dc.subject.keywordAuthor | Oxide traps | - |
dc.subject.keywordAuthor | Carrier number fluctuation | - |
dc.subject.keywordAuthor | Low-frequency noise | - |
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