A D-Band Differential Amplifier With Cross-Couple of Series-Connected Capacitor and Transmission Line-Based Dual-Frequency Gmax-Core

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dc.contributor.authorJeon, Hyoryeongko
dc.contributor.authorPark, Dae-Woongko
dc.contributor.authorLee, Sang-Gugko
dc.date.accessioned2024-09-26T09:00:09Z-
dc.date.available2024-09-26T09:00:09Z-
dc.date.created2024-09-26-
dc.date.issued2024-06-
dc.identifier.citationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.71, no.6, pp.2996 - 3000-
dc.identifier.issn1549-7747-
dc.identifier.urihttp://hdl.handle.net/10203/323209-
dc.description.abstractThis brief presents a novel wideband and high-gain amplifier that utilizes a differential dual-frequency G(max) -core with a cross-coupled network incorporating a capacitor and a transmission line (TL). The proposed cross-coupled network connects a capacitor to the TL and cross-couples the connected capacitor and TL, providing opportunities for design optimization. Through adjustable capacitance insertion, the proposed network achieves significantly higher equivalent reactance with a shorter TL length compared to a conventional TL-only embedding network. Consequently, this innovative structure enables the implementation of a G(max) -core requiring high reactance in a compact size, a feat unattainable with a conventional TL-only network. To validate the effectiveness of the proposed dual-frequency G(max) -core, a 3-stage D-band differential amplifier is designed using a 40 nm CMOS process. The measurement results demonstrate a peak gain of 14.2 dB at 149.9 GHz, a 3-dB bandwidth of 28.2 GHz, and an OP1dB of 1.9 dBm at the center frequency of 144.5 GHz, with a DC power dissipation of 65.8 mW.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA D-Band Differential Amplifier With Cross-Couple of Series-Connected Capacitor and Transmission Line-Based Dual-Frequency Gmax-Core-
dc.typeArticle-
dc.identifier.wosid001252627600061-
dc.identifier.scopusid2-s2.0-85183978112-
dc.type.rimsART-
dc.citation.volume71-
dc.citation.issue6-
dc.citation.beginningpage2996-
dc.citation.endingpage3000-
dc.citation.publicationnameIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.identifier.doi10.1109/TCSII.2024.3358808-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorPark, Dae-Woong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCapacitors-
dc.subject.keywordAuthorGain-
dc.subject.keywordAuthorTransistors-
dc.subject.keywordAuthorImpedance-
dc.subject.keywordAuthorPower transmission lines-
dc.subject.keywordAuthorResonant frequency-
dc.subject.keywordAuthorCapacitance-
dc.subject.keywordAuthorAmplifier-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorD-band-
dc.subject.keywordAuthorgain boosting-
dc.subject.keywordAuthormaximum achievable gain (G(max))-
dc.subject.keywordAuthorterahertz (THz)-
dc.subject.keywordAuthorwideband-
dc.subject.keywordPlus65-NM CMOS-
dc.subject.keywordPlusPOWER-AMPLIFIER-
dc.subject.keywordPlusHIGH-GAIN-
dc.subject.keywordPlusWIDE-BAND-
dc.subject.keywordPlusP-SAT-
dc.subject.keywordPlusDESIGN-
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EE-Journal Papers(저널논문)
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