DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Hyoryeong | ko |
dc.contributor.author | Park, Dae-Woong | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.date.accessioned | 2024-09-26T09:00:09Z | - |
dc.date.available | 2024-09-26T09:00:09Z | - |
dc.date.created | 2024-09-26 | - |
dc.date.issued | 2024-06 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.71, no.6, pp.2996 - 3000 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | http://hdl.handle.net/10203/323209 | - |
dc.description.abstract | This brief presents a novel wideband and high-gain amplifier that utilizes a differential dual-frequency G(max) -core with a cross-coupled network incorporating a capacitor and a transmission line (TL). The proposed cross-coupled network connects a capacitor to the TL and cross-couples the connected capacitor and TL, providing opportunities for design optimization. Through adjustable capacitance insertion, the proposed network achieves significantly higher equivalent reactance with a shorter TL length compared to a conventional TL-only embedding network. Consequently, this innovative structure enables the implementation of a G(max) -core requiring high reactance in a compact size, a feat unattainable with a conventional TL-only network. To validate the effectiveness of the proposed dual-frequency G(max) -core, a 3-stage D-band differential amplifier is designed using a 40 nm CMOS process. The measurement results demonstrate a peak gain of 14.2 dB at 149.9 GHz, a 3-dB bandwidth of 28.2 GHz, and an OP1dB of 1.9 dBm at the center frequency of 144.5 GHz, with a DC power dissipation of 65.8 mW. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A D-Band Differential Amplifier With Cross-Couple of Series-Connected Capacitor and Transmission Line-Based Dual-Frequency Gmax-Core | - |
dc.type | Article | - |
dc.identifier.wosid | 001252627600061 | - |
dc.identifier.scopusid | 2-s2.0-85183978112 | - |
dc.type.rims | ART | - |
dc.citation.volume | 71 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 2996 | - |
dc.citation.endingpage | 3000 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.identifier.doi | 10.1109/TCSII.2024.3358808 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Park, Dae-Woong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Capacitors | - |
dc.subject.keywordAuthor | Gain | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | Impedance | - |
dc.subject.keywordAuthor | Power transmission lines | - |
dc.subject.keywordAuthor | Resonant frequency | - |
dc.subject.keywordAuthor | Capacitance | - |
dc.subject.keywordAuthor | Amplifier | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | D-band | - |
dc.subject.keywordAuthor | gain boosting | - |
dc.subject.keywordAuthor | maximum achievable gain (G(max)) | - |
dc.subject.keywordAuthor | terahertz (THz) | - |
dc.subject.keywordAuthor | wideband | - |
dc.subject.keywordPlus | 65-NM CMOS | - |
dc.subject.keywordPlus | POWER-AMPLIFIER | - |
dc.subject.keywordPlus | HIGH-GAIN | - |
dc.subject.keywordPlus | WIDE-BAND | - |
dc.subject.keywordPlus | P-SAT | - |
dc.subject.keywordPlus | DESIGN | - |
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