DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Junghyeon | ko |
dc.contributor.author | Goh, Youngin | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2024-09-05T06:00:23Z | - |
dc.date.available | 2024-09-05T06:00:23Z | - |
dc.date.created | 2023-11-06 | - |
dc.date.created | 2023-11-06 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.citation | SMALL, v.20, no.9 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10203/322643 | - |
dc.description.abstract | The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO2 and ZrO2. In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite-structured FTJs is explored and contrasted with perovskite-based FTJs and other 2-terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic-in-memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite-structure FTJs. Finally, the materials and device integration difficulties related to fluorite-structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite-structure FTJs while also describing potential future possibilities for optimization. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions | - |
dc.type | Article | - |
dc.identifier.wosid | 001086980900001 | - |
dc.identifier.scopusid | 2-s2.0-85174421230 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | SMALL | - |
dc.identifier.doi | 10.1002/smll.202305271 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Hwang, Junghyeon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Review | - |
dc.subject.keywordAuthor | fluorite structures | - |
dc.subject.keywordAuthor | Hafnia | - |
dc.subject.keywordAuthor | neuromorphic devices | - |
dc.subject.keywordAuthor | non-volatile memory | - |
dc.subject.keywordAuthor | transport mechanism | - |
dc.subject.keywordAuthor | ferroelectric tunnel junctions | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | MEMRISTOR | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordPlus | ELECTRORESISTANCE | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | FILMS | - |
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