DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 최양규 | - |
dc.contributor.author | Kim, Hae-Yeon | - |
dc.contributor.author | 김해연 | - |
dc.date.accessioned | 2024-07-30T19:31:48Z | - |
dc.date.available | 2024-07-30T19:31:48Z | - |
dc.date.issued | 2024 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1097279&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/321698 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2024.2,[ii, 40 p. :] | - |
dc.description.abstract | This study explores the oscillation behavior manifested in a transistor structure with a current-input voltage-output configuration, constructed on a bulk silicon wafer. While its operational principle parallels that of a silicon-on-insulator (SOI) substrate, this study distinguishes itself by implementing oscillation operations through a single transistor latch (STL) on a bulk silicon substrate instead of an SOI substrate. More precisely, the research posits the existence of an electrical floating body (e-floating body) within a MOSFET fabricated on a bulk substrate. This e-floating body is functionally akin to the physical floating body that existed in MOSFETs on a SOI wafer. The study further examines how this configuration influences the latch and oscillation characteristics, revealing distinct tendencies in these behaviors. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 벌크 실리콘 웨이퍼▼a오실레이션▼a단일 트랜지스터 래치▼a전기적 부유바디▼a단일 트랜지스터 오실레이터 | - |
dc.subject | Bulk silicon wafer▼aOscillation▼aSingle transistor latch▼aElectrical floating body▼aSingle transistor oscillator | - |
dc.title | (A) study of single transistor oscillator on a bulk silicon wafer | - |
dc.title.alternative | 벌크 실리콘 기판 상 단일 트랜지스터 오실레이터 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | Choi, Yang-Kyu | - |
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