Study on ion milling and the $SnO_2$ buffer layer fabricated by atomic layer deposition for reproducible perovskite-Cu(In, Ga)$Se_2$ tandem solar cell

Abstract

Perovskite solar cells have gained significant interest due to their rapid efficiency improvement, reaching levels exceeding 10% over the past decade. Specifically, the tunability of the band gap by adjusting the right side of the ABX3 crystal structure has attracted attention, making perovskite solar cells suitable for use in multi-junction solar cells, particularly in the context of translucent structures. However, challenges arise, hindering their componentization in a shared universe. In this dissertation, research was conducted to enhance the covalent properties in a perovskite-Cu(In, Ga)$Se_2$ double junction solar cell. This improvement was achieved through the application of a ion milling and ALD-deposited $SnO_2$ layer using atomic layer deposition methods.