Study on retinal synapse and motion detecting unit for neuromorphic vision system implementation뉴로모픽 비전 시스템 구현을 위한 망막 시냅스 및 동작 감지 유닛에 대한 연구

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In order to implement a neuromorphic vision system, research to simulate visual information recognition of living things and data processing methods obtained through it is becoming important. In this study, we developed a retinomorphic synaptic device of a three-terminal transistor structure that responds to light and a motion detection unit that can recognize the direction and speed of object movement. Retinomorphic devices are next-generation sensor devices that have characteristics of existing devices whose current values vary depending on light intensity and illumination time, while also recognizing the direction of light. In addition to simply recognizing information about light, it also has memory characteristics. Therefore, near-sensor computing is possible through a device that can respond to light while maintaining its information. In the case of a $TiO_x$-based device included in the motion detecting unit, thin $TiO_x$ was deposited on a Pt substrate to produce oxides with different oxygen ion concentrations in the upper and lower layers. Through this, an interface-type RRAM with an Ag/$TiO_x$/Pt structure was manufactured, which is a volatile device with short-term memory characteristics that exhibit current integration and relaxation characteristics. This was integrated on top of the $NbO_x$-based threshold switching device, and HR model, widely known in motion detection models, was implemented as a memristor unit using the delay time to reach the specific resistance of the $TiO_x$-based memristor. The two detailed studies as above will help to expand the neuromorphic vision system.
Advisors
김경민researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2023
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2023.2,[vii, 58 p. :]

Keywords

뉴로모픽▼a비전 시스템▼a멤리스터▼a타이타늄 산화물▼a휘발성 저항 변화▼a진동▼a동작 감지▼a광소자▼a3단자 트랜지스터; Neuromorphic▼aVision system▼aMemristor▼aTitanium oxide▼aVolatile resistive switching▼aOscillation▼aMotion detection▼aPhotonic device▼aThree-terminal transistor

URI
http://hdl.handle.net/10203/321042
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1051062&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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