Thiophene-based boron chelators and the modeling of VX-metal ion chelation티오펜 붕소 배위자와 VX 금속 이온 배위자 모델에 관한 연구

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We have explored novel metal chelation units that utilize stabilizing internal hydrogen bonding networks as in the 2,3-dihydroxy-terephthalamide type chelation units. Three novel 3,4-dihydroxy-2,5-dicarboxy-thiophene systems: 5-hexylcarbamoyl-3,4-dihydroxy-thiophene-2-carboxylic acid methyl ester (5), 3-benzyloxy-4-hydroxy-thiophene-2,5-dicarboxylic acid bis-hexylamide (6), and 3,4-dihydroxy-thiophene-2, 5-dicarboxylic acid bis-hexylamide (7) were prepared. Boron chelation with these units has also been performed and characterized.
Advisors
Churchill, David G.researcher처칠, 데이비드researcher
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
2006
Identifier
301343/325007  / 020043076
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 화학과, 2006.2, [ iv, 51 p. ]

Keywords

boron chelator; VX nerve agent; metal chelation; 붕소 배위자; VX 신경물질; 금속 킬레이션; boron chelator; VX nerve agent; metal chelation; 붕소 배위자; VX 신경물질; 금속 킬레이션

URI
http://hdl.handle.net/10203/32089
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=301343&flag=dissertation
Appears in Collection
CH-Theses_Master(석사논문)
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