A new approach in top surface imaging through the selective adsorption of poly(dimethylsiloxane) derivatives

Abstract

A new top surface imaging process has been developed in which a newly modified poly(dimethylsiloxane) is selectively adsorbed on a patternwise exposed non-chemically amplified resist film. The polymer containing diazoketo groups which undergo the Wolff rearrangement upon irradiation in the Deep UV were synthesized. Deep UV light irradiation with mask renders the exposed regions hydrophilic by the formation of carboxylic groups. During the following dipping step, the modified poly(dimethylsiloxane) is selectively located at the exposed region by amide bonding formation. The negative tone images featuring 0.3 m line and space patterns were observed after oxygen reactive ion etching. The patterned surface was characterized by scanning electron microscope (SEM), atomic force microscope (AFM), auger electron spectroscope (AES). In this system, we intended not only to show the possible application with environmental friendly photoresist system but also to take the advantages of top surface imaging at the same time.