DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Geunpil | ko |
dc.contributor.author | Kim, Hyebi | ko |
dc.contributor.author | Jeon, Young-Uk | ko |
dc.contributor.author | Kim, In Soo | ko |
dc.contributor.author | Kim, Soo Jin | ko |
dc.contributor.author | Kim, Sangsik | ko |
dc.contributor.author | Kim, Jongbum | ko |
dc.date.accessioned | 2024-07-19T09:00:06Z | - |
dc.date.available | 2024-07-19T09:00:06Z | - |
dc.date.created | 2024-07-19 | - |
dc.date.created | 2024-07-19 | - |
dc.date.created | 2024-07-19 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.citation | NANOPHOTONICS, v.13, no.7, pp.1049 - 1057 | - |
dc.identifier.issn | 2192-8606 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320273 | - |
dc.description.abstract | Silicon (Si) offers cost-effective production and convenient on-chip integration for photodetection due to its well-established CMOS technology. However, the indirect bandgap of Si inherently limits its detection efficiency in the near-infrared (NIR) regime. Here, we propose a strategy to achieve high NIR photoresponse in Si by introducing a strong light-absorbing ultrathin gold (Au) film to generate hot carriers. Using a 4.6 nm thick-Au film deposited on Si, we achieved photoresponsivity of 1.6 mA/W at 1310 nm under zero-bias conditions, and rapid temporal responses of 7.5 and 8 mu s for rise and fall times, respectively, comparable to germanium (Ge) photodiodes. By utilizing an ultrathin (<6 nm) Au film as the light-detecting layer and thicker (>100 nm) Au film as electrodes, we introduce a unique approach to design a photodiode array based on a single metal (Au) platform. Comparative analysis with a commercial beam profiler image validates the performance of our designed array. This work presents an efficient strategy for manufacturing cost-effective and scalable NIR photodetector arrays, which eliminates the need for additional insulator layers. | - |
dc.language | English | - |
dc.publisher | WALTER DE GRUYTER GMBH | - |
dc.title | Scalable hot carrier-assisted silicon photodetector array based on ultrathin gold film | - |
dc.type | Article | - |
dc.identifier.wosid | 001143496600001 | - |
dc.identifier.scopusid | 2-s2.0-85183164248 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1049 | - |
dc.citation.endingpage | 1057 | - |
dc.citation.publicationname | NANOPHOTONICS | - |
dc.identifier.doi | 10.1515/nanoph-2023-0656 | - |
dc.contributor.localauthor | Kim, Sangsik | - |
dc.contributor.nonIdAuthor | Kim, Geunpil | - |
dc.contributor.nonIdAuthor | Kim, Hyebi | - |
dc.contributor.nonIdAuthor | Jeon, Young-Uk | - |
dc.contributor.nonIdAuthor | Kim, In Soo | - |
dc.contributor.nonIdAuthor | Kim, Soo Jin | - |
dc.contributor.nonIdAuthor | Kim, Jongbum | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | hot carrier | - |
dc.subject.keywordAuthor | extinction coefficient | - |
dc.subject.keywordAuthor | gold film | - |
dc.subject.keywordAuthor | photodetector array | - |
dc.subject.keywordAuthor | NIR photodetection | - |
dc.subject.keywordPlus | SCHOTTKY JUNCTION | - |
dc.subject.keywordPlus | HIGH-DETECTIVITY | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | GENERATION | - |
dc.subject.keywordPlus | AU | - |
dc.subject.keywordPlus | CU | - |
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