Direct bandgap germanium-on-silicon inferred from 5.7% ⟨100⟩ uniaxial tensile strain [Invited]

Abstract

We report uniaxial tensile strains up to 5.7% along < 100 > in suspended germanium (Ge) wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to make Ge a direct bandgap semiconductor. Theoretical calculations show that a significant fraction of electrons remain in the indirect conduction valley despite the direct bandgap due to the much larger density of states; however, recombination can nevertheless be dominated by radiative direct bandgap transitions if defects are minimized. We then calculate the theoretical efficiency of direct bandgap Ge LEDs and lasers. These strained Ge wires represent a direct bandgap Group IV semiconductor integrated directly on a silicon platform. (C) 2014 Chinese Laser Press