DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Qimiao | ko |
dc.contributor.author | Wu, Shaoteng | ko |
dc.contributor.author | Zhang, Lin | ko |
dc.contributor.author | Burt, Daniel | ko |
dc.contributor.author | Zhou Hao | ko |
dc.contributor.author | Nam, Donguk | ko |
dc.contributor.author | Fan Weijun | ko |
dc.contributor.author | Tan , Chuan Seng | ko |
dc.date.accessioned | 2024-07-13T13:00:21Z | - |
dc.date.available | 2024-07-13T13:00:21Z | - |
dc.date.created | 2024-07-13 | - |
dc.date.created | 2024-07-13 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.citation | OPTICS LETTERS, v.46, no.15, pp.3809 - 3812 | - |
dc.identifier.issn | 0146-9592 | - |
dc.identifier.uri | http://hdl.handle.net/10203/320231 | - |
dc.description.abstract | Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional (3D) photonic-integrated circuits (PICs). We report, to our knowledge, the first demonstration of GeSn dual-waveband resonant-cavity-enhanced photodetectors (RCE PDs) on GSOI platforms with resonance-enhanced responsivity at both 2 mu m and 1.55 mu m bands. 10% Sn is introduced to the GeSn absorbing layer to extend the detection wavelength to the 2 mu m band. A vertical Fabry-Perot cavity is designed to enhance the responsivity. The measured responsivity spectra show resonance peaks that cover a wide wavelength range near both the 2 mu m and conventional telecommunication bands. This work demonstrates that GeSn dual-waveband RCE PDs on a GSOI platform are promising for CMOS-compatible 3D PICs for optoelectronic applications in 2 mu m and. telecommunication bands. (C) 2021 Optical Society of America | - |
dc.language | English | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.title | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 1.55 μm optical communication bands | - |
dc.type | Article | - |
dc.identifier.wosid | 000685207400040 | - |
dc.identifier.scopusid | 2-s2.0-85111689227 | - |
dc.type.rims | ART | - |
dc.citation.volume | 46 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 3809 | - |
dc.citation.endingpage | 3812 | - |
dc.citation.publicationname | OPTICS LETTERS | - |
dc.identifier.doi | 10.1364/OL.434044 | - |
dc.contributor.localauthor | Nam, Donguk | - |
dc.contributor.nonIdAuthor | Chen, Qimiao | - |
dc.contributor.nonIdAuthor | Wu, Shaoteng | - |
dc.contributor.nonIdAuthor | Zhang, Lin | - |
dc.contributor.nonIdAuthor | Burt, Daniel | - |
dc.contributor.nonIdAuthor | Zhou Hao | - |
dc.contributor.nonIdAuthor | Fan Weijun | - |
dc.contributor.nonIdAuthor | Tan , Chuan Seng | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHOTODIODE | - |
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