Synthesis and characterization of doped ZnO and ZnS One dimensional nanostructures

Abstract

Synthesis and Characterization of various morphologies of ZnO and ZnS nanostructures ZnO and ZnS are typical example of II-VI semiconductor which is extensively investigated these days for their unique property. We successfully synthesized novel nanostructures of ZnO and ZnS by chemical vapor transport and condensation (CVTC) method. Different morphologies of nanostructures such as nanowire, nanobelt, nanocomb and nanosaw are determined by small change of conditions like temperature or pressure. And structural features also important factor. These structures are characterized by scanning electron microscope, tunneling electron microscope, X-ray diffraction. Synthesis and Characterization of Ga doped ZnO nanowires High quality Ga doped ZnO nanowires were synthesized through a simple chemical vapor deposition. High resolution transmission electron micrograph reveals that the Ga doped nanowires were single crystalline hexagonal wurtzite structure grown in [001] direction. The diameters of the nanowires were in range of 50 to 100 nm. XPS and EDX spectra show the direct evidence of Ga doping about 2 at% to 5 at%. Photoluminescence measurement shows the good optical quality of Ga doped ZnO nanowires. Conductivity enhanced Ga doped ZnO nanowires are n-type semiconductor, which will be promise for the nanoelectronics devices. Synthesis and Characterization of (Mn, Fe) doped ZnS nanobelts New room temperature ferromagnetic semiconductor (Mn, Fe) doped ZnS nanobelts were successfully synthesized via simple vapor phase growth. The nanobelts were shown as single crystal hexagonal wurtzite structure grown in [100] direction from high resolution transmission electron micrograph. Mn and Fe were observed by mapping profiles of TEM-EDX and shown about 0.5 % and 1 % contents from EDX. Magnetic hysteresis loop was distinctly observed at 300 K, which means room temperature ferromagnetism