Effect of Charge Density Wave on the Electronic Transport in Graphene

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dc.contributor.authorKim, Boramko
dc.contributor.authorLi, Jinshuko
dc.contributor.authorPark, Jeehoonko
dc.contributor.authorLim, Hongsikko
dc.contributor.authorMyeong, Gyuhoko
dc.contributor.authorShin, Wongilko
dc.contributor.authorKim, Seunghoko
dc.contributor.authorJin, Taehyeokko
dc.contributor.authorZhang, Qiko
dc.contributor.authorSung, Kyunghwanko
dc.contributor.authorLe, Duc Duyko
dc.contributor.authorWatanabe, Kenjiko
dc.contributor.authorTaniguchi, Takashiko
dc.contributor.authorYang, Chan-Hoko
dc.contributor.authorHwang, Euyheonko
dc.contributor.authorCho, Sungjaeko
dc.date.accessioned2024-06-11T07:00:16Z-
dc.date.available2024-06-11T07:00:16Z-
dc.date.created2024-06-11-
dc.date.created2024-06-11-
dc.date.created2024-06-11-
dc.date.issued2024-02-
dc.identifier.citationACS APPLIED ELECTRONIC MATERIALS, v.6, no.2, pp.1174 - 1180-
dc.identifier.issn2637-6113-
dc.identifier.urihttp://hdl.handle.net/10203/319736-
dc.description.abstractThe heterostructure of two-dimensional (2D) materials has been extensively studied, and many important results have been revealed in the 2D system. However, the properties of charge density wave (CDW) systems combined with other electronic materials have not yet been investigated sufficiently. Here, we incorporate the CDW properties of 1T-TaS2 into the electronic transport in graphene. During the CDW phase transitions, anomalous transport behaviors are observed within graphene, which are closely related to the formation of correlated disorder in 1T-TaS2. In particular, the commensurate CDW forms a periodic charge distribution with potential fluctuations and thereby constitutes the correlated charged impurities, which gives rise to a decrease in the resistivity in graphene. The demonstration of the CDW-graphene heterostructure system helps understanding the combinations with the CDW system and paves the way to control the temperature-dependent resistivity of graphene and to develop useful functional electronic devices such as graphene-based sensors and memory devices.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleEffect of Charge Density Wave on the Electronic Transport in Graphene-
dc.typeArticle-
dc.identifier.wosid001174690400001-
dc.identifier.scopusid2-s2.0-85186098036-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.issue2-
dc.citation.beginningpage1174-
dc.citation.endingpage1180-
dc.citation.publicationnameACS APPLIED ELECTRONIC MATERIALS-
dc.identifier.doi10.1021/acsaelm.3c01560-
dc.contributor.localauthorYang, Chan-Ho-
dc.contributor.localauthorCho, Sungjae-
dc.contributor.nonIdAuthorKim, Boram-
dc.contributor.nonIdAuthorLi, Jinshu-
dc.contributor.nonIdAuthorPark, Jeehoon-
dc.contributor.nonIdAuthorLim, Hongsik-
dc.contributor.nonIdAuthorMyeong, Gyuho-
dc.contributor.nonIdAuthorShin, Wongil-
dc.contributor.nonIdAuthorKim, Seungho-
dc.contributor.nonIdAuthorJin, Taehyeok-
dc.contributor.nonIdAuthorZhang, Qi-
dc.contributor.nonIdAuthorSung, Kyunghwan-
dc.contributor.nonIdAuthorLe, Duc Duy-
dc.contributor.nonIdAuthorWatanabe, Kenji-
dc.contributor.nonIdAuthorTaniguchi, Takashi-
dc.contributor.nonIdAuthorHwang, Euyheon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcharge density wave-
dc.subject.keywordAuthorgraphene transport-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthorcorrelation-
dc.subject.keywordAuthorcharged impurityscattering-
dc.subject.keywordPlusPHASE-TRANSITIONS-
dc.subject.keywordPlus1T-TAS2-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusSTATE-
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