DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Kim, Myungsu | ko |
dc.date.accessioned | 2024-05-30T10:00:17Z | - |
dc.date.available | 2024-05-30T10:00:17Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/319570 | - |
dc.description.abstract | A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate. | - |
dc.title | Steep-slope field-effect transistor and fabrication method thereof | - |
dc.title.alternative | 스팁-슬롭 전계 효과 트랜지스터와 그 제조 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 17437368 | - |
dc.identifier.patentRegistrationNumber | 11869950 | - |
dc.date.application | 2021-07-29 | - |
dc.date.registration | 2024-01-09 | - |
dc.publisher.country | US | - |
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