DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Kim, Myungsu | ko |
dc.date.accessioned | 2024-04-18T08:00:17Z | - |
dc.date.available | 2024-04-18T08:00:17Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/319104 | - |
dc.description.abstract | Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference. | - |
dc.title | Dynamic random access memory device with long retention and operating method thereof | - |
dc.title.alternative | 장시간 전하 저장 DRAM 소자와 그 동작 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 17674301 | - |
dc.identifier.patentRegistrationNumber | 11922988 | - |
dc.date.application | 2022-02-17 | - |
dc.date.registration | 2024-03-05 | - |
dc.publisher.country | US | - |
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