Adsorption and desorption of acetylene on Ge(100)Ge(100) 표면 위의 아세틸렌 흡착과 탈착에 관한 연구

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dc.contributor.advisorKim, Se-Hun-
dc.contributor.advisor김세훈-
dc.contributor.authorKim, An-Soon-
dc.contributor.author김안순-
dc.date.accessioned2011-12-13T04:48:15Z-
dc.date.available2011-12-13T04:48:15Z-
dc.date.issued2001-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=165999&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/31889-
dc.description학위논문(석사) - 한국과학기술원 : 화학과, 2001.2, [ ix, 51 p. ]-
dc.description.abstractThe adsorption and thermal desorption of acetylene on Ge(100) have been studied in ultrahigh vacuum by Auger electron spectroscopy (AES), temperature-programmed desorption (TPD), and low energy electron diffraction (LEED). Acetylene is found to chemisorb and to desorb molecularly on Ge(100) via a mobile precursor in a different way with Si(100) on which chemisorbed acetylene was found to undergo two thermal reactions; a minor pathway (molecular desorption) and a major pathway (dissociation of acetylene). The difference between activation energy for desorption from the precursor and that for reaction from the precursor into the chemisorbed state is found to be ($E_p$ - $E_c$) = 3.6 ± 0.23 kcal/mol. TPD measurements show that two molecular desorption features at all coverages, indicating that at least two adsorption states can be formed. For desorption kinetics, $C_2H_2$ desorption is first order reaction and the activation energies for desorption at saturation coverage are 30.6 kcal/mol for $α_1$ state and 32.9 kcal/mol for $α_2$ state whereas the energy for desorption of acetylene from Si(100) was found to be 46.1 ± 2.0 kcal/mol. The lower desorption activation energy allows $C_2H_2$ to desorb prior to significant dissociation which is a major pathway in desorption from Si(100). The angular distrbution of $C_2H_2$ desorption is peaked at surface normal. The results are discussed on the basis of bonding geometry. From the retention of 2$\times$1 LEED patterns as increasing the $C_2H_2$ coverage, it is also concluded that $C_2H_2$ on Ge(100) chemisorbs molecularly.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectdesorption mechanism-
dc.subjectadsorption mechanism-
dc.subjectacetylene-
dc.subjectGe(100)-
dc.subjectsurface reaction-
dc.subject표면위의 반응-
dc.subject탈착 메커니즘-
dc.subject흡착 메커니즘-
dc.subject아세틸렌-
dc.subjectGe(100)-
dc.titleAdsorption and desorption of acetylene on Ge(100)-
dc.title.alternativeGe(100) 표면 위의 아세틸렌 흡착과 탈착에 관한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN165999/325007-
dc.description.department한국과학기술원 : 화학과, -
dc.identifier.uid000993116-
dc.contributor.localauthorKim, Se-Hun-
dc.contributor.localauthor김세훈-
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