DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Tae-Sik | ko |
dc.contributor.author | Lee, Yeongjun | ko |
dc.contributor.author | Xu, Wentao | ko |
dc.contributor.author | Kim, Yeon Hoo | ko |
dc.contributor.author | Kim, Miseong | ko |
dc.contributor.author | Min, Sung-Yong | ko |
dc.contributor.author | Kim, Tae Hoon | ko |
dc.contributor.author | Jang, Ho Won | ko |
dc.contributor.author | Lee, Tae-Woo | ko |
dc.date.accessioned | 2024-03-04T01:00:29Z | - |
dc.date.available | 2024-03-04T01:00:29Z | - |
dc.date.created | 2024-02-26 | - |
dc.date.created | 2024-02-26 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | NANO ENERGY, v.58, pp.437 - 446 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/318357 | - |
dc.description.abstract | One-dimensional metal oxide (MO) micro-wires and nano-wires (MOWs) can be excellent functional units for integrated and transparent electronics. However, MOWs produced using conventional synthesis methods are short, uncontrollable, and randomly-distributed, so they cannot be easily used to fabricate high-density transistor arrays with precisely-controlled MOW-channels. Here, we describe a large-scale direct-printed universal nanoscale MOW electronics which includes highly-aligned, digitally-controlled and arbitrarily-long MOW arrays and various nanoscale applications of MOW field-effect transistors (FETs), neuromorphic synaptic transistors, and gas sensors. Broad classes of pristine, doped and alloyed MOWs are fabricated, so we demonstrated all-MOWFETs composed of conducting indium oxide (In2O3) wires and semiconducting indium zinc oxide (IZO) wires; the devices show a high carrier mobility mu similar to 17.67 cm(2) V-1 s(-1), comparable to mu of MO thin-film FETs. MOW synaptic transistors show presynaptic signals dependent postsynaptic behaviors similar to biological synaptic responses; which can be promising nano-electronic units of high-density neuromorphic devices. We also demonstrated MOW gas sensors which show high response to NO2 gas. Our direct-printed, large-scale, and individually-controlled MOW electronics would be a promising approach in development of industrially-viable MOW electronics and open new horizons for precisely-controlled inorganic MOW electronics and nanoscale printed electronics. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.title | Direct-printed nanoscale metal-oxide-wire electronics | - |
dc.type | Article | - |
dc.identifier.wosid | 000461433600049 | - |
dc.identifier.scopusid | 2-s2.0-85060756451 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.beginningpage | 437 | - |
dc.citation.endingpage | 446 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2019.01.052 | - |
dc.contributor.localauthor | Lee, Yeongjun | - |
dc.contributor.nonIdAuthor | Kim, Tae-Sik | - |
dc.contributor.nonIdAuthor | Xu, Wentao | - |
dc.contributor.nonIdAuthor | Kim, Yeon Hoo | - |
dc.contributor.nonIdAuthor | Kim, Miseong | - |
dc.contributor.nonIdAuthor | Min, Sung-Yong | - |
dc.contributor.nonIdAuthor | Kim, Tae Hoon | - |
dc.contributor.nonIdAuthor | Jang, Ho Won | - |
dc.contributor.nonIdAuthor | Lee, Tae-Woo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Nanowire electronics | - |
dc.subject.keywordAuthor | Metal oxide nanowires | - |
dc.subject.keywordAuthor | Metal oxide transistors | - |
dc.subject.keywordAuthor | Nanowire printing | - |
dc.subject.keywordAuthor | Synaptic transistors | - |
dc.subject.keywordAuthor | Metal oxide gas sensors | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | GAS SENSORS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | INKS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.