DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Duk Young | ko |
dc.contributor.author | Kim, Kyu-Nam | ko |
dc.contributor.author | Cho, Hyunjin | ko |
dc.contributor.author | Park, SunJoong | ko |
dc.date.accessioned | 2024-02-02T07:01:21Z | - |
dc.date.available | 2024-02-02T07:01:21Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/317994 | - |
dc.description.abstract | The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer. | - |
dc.title | Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device | - |
dc.title.alternative | 양자점 발광다이오드, 그 제조 방법 및 양자점 발광표시장치 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Jeon, Duk Young | - |
dc.contributor.nonIdAuthor | Kim, Kyu-Nam | - |
dc.contributor.assignee | KAIST, LG Display Co.,Ltd. | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16909912 | - |
dc.identifier.patentRegistrationNumber | 11417850 | - |
dc.date.application | 2020-06-23 | - |
dc.date.registration | 2022-08-16 | - |
dc.publisher.country | US | - |
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