Semiconductor device and semiconductor logic device

Abstract

The present invention relates to a semiconductor device. A semiconductor device (1000) based on a spin orbit torque (SOT) effect, according to an embodiment of the present invention, comprises: a first electrode; and a first cell and a second cell which are connected to the first electrode, wherein the first cell and the second cell are disposed on the first electrode and include a magnetic tunneljunction (MTJ) in which a free magnetic layer and a stationary magnetic layer are arranged with an insulation layer interposed therebetween, and wherein the first cell and the second cell are configured such that, when a current applied in the plane of the first electrode exceeds a critical current value of each cell, the magnetization orientation of the free magnetic layer is changed, and the critical current values of the first cell and the second cell are different from each other.