Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 69
  • Download : 0
Monolithic 3-D (M3D) integration has been spotlighted as an approach to overcome the limitation of classical scaling in integrated circuits (IC). However, the fabrication of the top-tier devices in M3D is challenging because of the limited maximum thermal budget during the integration process. In this work, a nanosecond annealing process using a pulsed green laser is introduced to fabricate the top-tier devices and minimize the thermal influence on the bottom-tier devices. With green laser, the average temperature gradient along the vertical direction within top-tier devices was reduced as much as 26%, compared to excimer laser. The pulsed green laser annealing effectively activated the dopant to form the source/drain of top-tier devices, which showed lower contact resistance ( $\textit{R}_{\textit{c}}$ ) by around 38% compared to the case of rapid thermal annealing (RTA) process. Furthermore, the nanosecond green laser annealing achieved a lower equivalent oxide thickness (EOT) and 63% reduction of interface trap density ( $\textit{D}_{\text{it}}$ ) of high-K gate dielectric in the top-tier MOS devices, leading to smaller subthreshold swing (SS) and enhanced effective mobility up to 13% and 29%, respectively, compared to the use of RTA.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2024-01
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.890 - 895

ISSN
0018-9383
DOI
10.1109/TED.2023.3338601
URI
http://hdl.handle.net/10203/317875
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0