Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

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In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed leaky-FeFET neuron-based physical reservoir exhibited 78.6% and 62.9% improvements in memory capacity for Short Term Memory (STM) and Parity Check (PC) tasks, respectively. The improvements are attributed to the temporal memory effect induced by the leaky-integrating neuronal behavior, which originates from the retention degradation of the FeFET.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2024-01
Language
English
Citation

IEEE ELECTRON DEVICE LETTERS, v.45, no.1, pp.108 - 111

ISSN
0741-3106
DOI
10.1109/LED.2023.3335142
URI
http://hdl.handle.net/10203/317283
Appears in Collection
EE-Journal Papers(저널논문)
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