A Single MOSFET-Based Oscillator on a Bulk-Silicon Wafer

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A large kink, causing an abrupt transition of drain current ( IDS) from a low to a high level, is observed even in a MOSFET on a bulk-silicon wafer (bulk-MOSFET). When a constant input current ( Iin) is applied to the drain (D) of a bulk-MOSFET, an oscillating output voltage ( Vout) is generated from the same D similar to the oscillation that occurs in a MOSFET on a silicon-on-insulator (SOI) wafer. This characteristic is attributed to the floating body (FB) effect. In the same manner that a physical FB usually exists in a SOI-device, an electrical FB is realized even in a bulk-device due to the built-in potential between a moderately doped p-well and an underlying lightly doped p-type wafer. This bulk-MOSFET oscillator can be utilized in biomedical and neuromorphic applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2024-01
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.45, no.1, pp.8 - 11

ISSN
0741-3106
DOI
10.1109/LED.2023.3329815
URI
http://hdl.handle.net/10203/317276
Appears in Collection
EE-Journal Papers(저널논문)
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