Metal thin films with vanometer dimension : growth and electronic structure나노미터 크기를 가진 금속박막 : 성장과 전자구조

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Electronic and Magnetic Properties of Fe/W(100) Studied by ARUPS Electronic and magnetic properties of ultrathin films Fe grown on W(100) substrate at 298 and 400 K as a function of Fe films thickness (1~4.0 ML ) have been characterized using angle-resolved ultra-violet photoemission spectroscopy (ARUPS). We have found the change of growth mode depending on the substrate temperature (at 298 and 400 K) and a thermally stable layer(1.0 or 2.0 ML) obtained by annealing to 900 K after Fe deposition at room temperature, which is a controversial issue. The electronic band structure and magnetic properties as functions of Fe coverage and substrate temperature has been investigated with the different spectra for clean W(100) spectrum in normal emission mode and work function change by angle resolved ultra-violet photoemission spectra. Observation of Unconventional Metal-Insulator Phase Transition of Ce/Si(111): Thickness Driven Phenomena The metal-insulator phase transition has been found at the surface of Ce on Si(111) as a function of Ce thickness. The existence of insulating phase at a critical coverage was clearly observed using x-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). We observed a huge binding energy shift(about 2.7 eV) in XPS, and the band gap (0.8 eV) in STS at this critical coverage. Its origin is still not quite clear, however this can be expected to originate from the localization of Ce layers or the surface relaxation as is the case in Sb on GaAs(110). Step Meandering Induced by Ce Silicide Formation on Si(111) Using XPS and STM Rare earth Ce silicide on Si(111) can be prepared by the deposition of Ce atoms on Si(111) above 500 ℃. We report the formation and diffusion process of the Ce silicide formed by the initial (less than 4.0 ML) adsorption of Ce atoms on Si(111) followed by annealing to 500 ℃ using x-ray photoelectorn spectroscopy (XPS) and variable temperature Scanning Tu...
Advisors
Kim, Se-Hunresearcher김세훈researcher
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
2001
Identifier
165808/325007 / 000965326
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 화학과, 2001.2, [ xvii, 132 p. ]

Keywords

scanning tunneling microscopy; angle resolved photoemission spectroscopy; metal thin film; nano meter; metal-insulator phase transition; 금속-전열체 상전이; 주사 터널링 현미경; 각분해광전자분광기; 금속박막; 나노미터

URI
http://hdl.handle.net/10203/31557
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=165808&flag=dissertation
Appears in Collection
CH-Theses_Ph.D.(박사논문)
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