A Wideband 60 GHz Gm-Boosted Up-Conversion Mixer

Abstract

In this paper, a wideband gm-boosted up-conversion mixer is presented, which is fabricated in 28-nm bulk CMOS process. It adopts a double-balanced structure for high isolation characteristics. The circuit employs a current bleeding path through PMOS to enhance the gm, resulting in a high conversion gain. The feedback resistor R enables impedance matching without an additional impedance matching network while providing wideband characteristics in the baseband. Furthermore, the symmetrical layout of the switching stage cells improves the LO to RF isolation performance. The measured peak conversion gain is 3.2 dB, and the 3-dB frequency bandwidth is more than 6 GHz. The power consumption is 6.38 mW at 1.1 V supply voltage. The chip size, including the pads, is 0.53 x 0.42 mm2 and the core area is 0.2 x 0.26 mm2.