Highly reliable artificial synapse based on two-dimensional material - oxide bilayer memristor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안원배 | ko |
| dc.contributor.author | 차준회 | ko |
| dc.contributor.author | 오정엽 | ko |
| dc.contributor.author | 배상근 | ko |
| dc.contributor.author | 최성율 | ko |
| dc.date.accessioned | 2023-11-28T06:04:20Z | - |
| dc.date.available | 2023-11-28T06:04:20Z | - |
| dc.date.created | 2023-11-27 | - |
| dc.date.issued | 2022-01-24 | - |
| dc.identifier.citation | 제29회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/315330 | - |
| dc.language | English | - |
| dc.publisher | 한국반도체연구조합 | - |
| dc.title | Highly reliable artificial synapse based on two-dimensional material - oxide bilayer memristor | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제29회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원 그랜드호텔 & 온라인 | - |
| dc.contributor.localauthor | 최성율 | - |
| dc.contributor.nonIdAuthor | 배상근 | - |
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